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Base transit time of a bipolar junction transistor with nonuniformly doped base
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| dc.contributor.advisor | Hassan, Dr. M. M. Shahidul | |
| dc.contributor.author | Ziaur Rahman Khan, Md. | |
| dc.date.accessioned | 2016-08-07T08:17:19Z | |
| dc.date.available | 2016-08-07T08:17:19Z | |
| dc.date.issued | 2002-04-16 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3607 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Base transit time | en_US |
| dc.subject | Bipolar junction transistor | en_US |
| dc.subject | Nonuniformly doped base | en_US |
| dc.title | Base transit time of a bipolar junction transistor with nonuniformly doped base | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 040006215 P | en_US |
| dc.identifier.accessionNumber | 96755 | |
| dc.contributor.callno | 623.815282/ZIA/2002 | en_US |
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)