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Effect of wavefunction penetration into the gate oxide on self-consistent modeling of deep submicron MOSFETs
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| dc.contributor.advisor | Anisul Haque, Dr. | |
| dc.contributor.author | Zahed Kauser, Mohammad | |
| dc.date.accessioned | 2016-08-10T04:08:08Z | |
| dc.date.available | 2016-08-10T04:08:08Z | |
| dc.date.issued | 2001-11 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3636 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Effect - Wave function - Penetration - Gate oxide - Self-consistent - Modeling - Deep - Submicron - MOSFETs | en_US |
| dc.title | Effect of wavefunction penetration into the gate oxide on self-consistent modeling of deep submicron MOSFETs | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 040006223 | en_US |
| dc.identifier.accessionNumber | 95851 | |
| dc.contributor.callno | 623.8173/ZAH/2001 | en_US |
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Dissertation/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Thesis) of Electrical and Electronic Engineering (EEE)