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Study of tunneling gate current in a MOS structure incorporating inelasting scattering processes
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| dc.contributor.advisor | Khan, Dr. M. Rezwan | |
| dc.contributor.author | Murshed Mahmud Chowdhury | |
| dc.date.accessioned | 2016-08-14T04:13:51Z | |
| dc.date.available | 2016-08-14T04:13:51Z | |
| dc.date.issued | 2001-08 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3654 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Tunneling gate current | en_US |
| dc.subject | MOS structure | en_US |
| dc.subject | Incorporating inelasting | en_US |
| dc.subject | Scattering processes | en_US |
| dc.title | Study of tunneling gate current in a MOS structure incorporating inelasting scattering processes | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 9606221 P | en_US |
| dc.identifier.accessionNumber | 95509 | |
| dc.contributor.callno | /MUR/2001 | en_US |
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Dissertation/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Thesis) of Electrical and Electronic Engineering (EEE)