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Calculation of gate leakage current in deep submicron MOSSFET in the presence of electron phase-breading scattering
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| dc.contributor.advisor | Anisul Haque, Dr. | |
| dc.contributor.author | Saif Uz Zaman | |
| dc.date.accessioned | 2016-08-16T03:38:31Z | |
| dc.date.available | 2016-08-16T03:38:31Z | |
| dc.date.issued | 2001-05 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3659 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Calculation - Gate leakage - Current - Deep submicron - MOSSFET - Presence - Electron - Phase-breading - Scattering | en_US |
| dc.title | Calculation of gate leakage current in deep submicron MOSSFET in the presence of electron phase-breading scattering | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 9606244 F | en_US |
| dc.identifier.accessionNumber | 95184 | |
| dc.contributor.callno | 623.81528/SAI/2001 | en_US |
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)