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Base transit time of a bipolar transistor operated in quasi-saturation region
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| dc.contributor.advisor | Shahidul Hassan, Dr. M. M. | |
| dc.contributor.author | Rezaul Hoque Akanda, Md. | |
| dc.date.accessioned | 2016-08-23T04:00:09Z | |
| dc.date.available | 2016-08-23T04:00:09Z | |
| dc.date.issued | 1996-12 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3692 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Base | en_US |
| dc.subject | Transit time | en_US |
| dc.subject | Bipolar transistor operated | en_US |
| dc.subject | Quasi-saturation region | en_US |
| dc.title | Base transit time of a bipolar transistor operated in quasi-saturation region | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 901329 P | en_US |
| dc.identifier.accessionNumber | 90713 | |
| dc.contributor.callno | 623.84133/REZ/1996 | en_US |
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Dissertation/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Thesis) of Electrical and Electronic Engineering (EEE)