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Frequency dependence of total gate capacitance of submicron inversion MOS structures

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dc.contributor.advisor Shahidul Hassan, Dr. M. M.
dc.contributor.author Zahangir Kabir, Mohammad
dc.date.accessioned 2016-09-20T05:07:22Z
dc.date.available 2016-09-20T05:07:22Z
dc.date.issued 1995-01
dc.identifier.uri http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3787
dc.description.abstract For abstracts please see full text en_US
dc.language.iso en en_US
dc.publisher Department of Electrical and Electronic Engineering, BUET en_US
dc.subject Frequency dependence en_US
dc.subject Gate capacitance en_US
dc.subject Submicron inversion en_US
dc.subject MOS structure en_US
dc.title Frequency dependence of total gate capacitance of submicron inversion MOS structures en_US
dc.type Thesis-MSc en_US
dc.contributor.id 921324 P en_US
dc.identifier.accessionNumber 89503
dc.contributor.callno 623.815/ZAH/1995 en_US


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