DSpace Repository
Relaxation characteristics of oxide trapped charge in an MOS structure - a quantum mechanical approach
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.advisor | Khosru, Dr. Quazi Deen Mohd. | |
| dc.contributor.author | Nasir Uddin, Mohammad | |
| dc.date.accessioned | 2016-10-04T04:24:27Z | |
| dc.date.available | 2016-10-04T04:24:27Z | |
| dc.date.issued | 1996-04 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3849 | |
| dc.description.abstract | For abstracts please see full text | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, BUET | en_US |
| dc.subject | Relaxation characteristics | en_US |
| dc.subject | Oxide trapped charge | en_US |
| dc.subject | MOS structure - a quantum | en_US |
| dc.subject | Mechanical approach | en_US |
| dc.title | Relaxation characteristics of oxide trapped charge in an MOS structure - a quantum mechanical approach | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 921307 P | en_US |
| dc.identifier.accessionNumber | 89551 | |
| dc.contributor.callno | /NAS/1996 | en_US |
Files in this item
This item appears in the following Collection(s)
-
Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)