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Dependence of second breakdown in transistor on load inductance and reverse base drive

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dc.contributor.advisor Shahidul Hassan, Dr. M. M.
dc.contributor.author Kamrul Hasan, Md.
dc.date.accessioned 2016-10-16T06:25:37Z
dc.date.available 2016-10-16T06:25:37Z
dc.date.issued 1991-08
dc.identifier.uri http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3912
dc.description.abstract For abstracts please see full text en_US
dc.language.iso en en_US
dc.publisher Department of Electrical and Electronic Engineering, BUET en_US
dc.subject Dependence en_US
dc.subject Second breakdown en_US
dc.subject Transistor - Load inductance en_US
dc.subject Reverse base drive en_US
dc.title Dependence of second breakdown in transistor on load inductance and reverse base drive en_US
dc.type Thesis-MSc en_US
dc.contributor.id 891349 P en_US
dc.identifier.accessionNumber 81502
dc.contributor.callno 623.8171/KAM/1991 en_US


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