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Design of non-volatile quaternary memory cell using memristor-mos hybrid structure

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dc.contributor.advisor Harun-ur-Rashid, Dr. A.B.M
dc.contributor.author Biswas, Baishakhi Rani
dc.date.accessioned 2019-01-12T04:53:24Z
dc.date.available 2019-01-12T04:53:24Z
dc.date.issued 2018-09-29
dc.identifier.uri http://lib.buet.ac.bd:8080/xmlui/handle/123456789/5050
dc.description.abstract Memristor is a newly fabricated device which is becoming very popular among the researchers for its non-volatility, nanometer size and good switching behavior. In this work- memristor-MOS hybrid architecture based quaternary memory array design with complete read write technique has been developed. Each individual cell of the large memory array system contains only one memristor and a cell selection transistor and is able to store two bits of memory in the single cell. The proposed writing technique for this design is data erasing based which reduces circuit complexity by avoiding feedback read-based writing technique. The write circuit of the proposed design consists of a simple transmission gate and is common for the whole memory array. As a single cell stores two bits of data or in other words 4 different states (00, 01, 10, 11), the writing time is larger than conventional memory circuits. The read mechanism for this design is simple voltage division based and the read circuit has only a memristor and read enabling transistor. A complete 16×16 quaternary memory array with necessary peripheral read-write circuit has been simulated in LTSPICE for the verification of the proposed design. Further analysis has been done to prove that the proposed design shows superiority in terms of compactness, energy consumption, acceptable noise margin and simplicity in operation. en_US
dc.language.iso en en_US
dc.publisher Department of Electrical and Electronic Engineering (EEE), BUET en_US
dc.subject Memristors en_US
dc.title Design of non-volatile quaternary memory cell using memristor-mos hybrid structure en_US
dc.type Thesis-MSc en_US
dc.contributor.id 1015062219 en_US
dc.identifier.accessionNumber 116868
dc.contributor.callno 623.815/BIS/2018 en_US

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