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Elastic phonon dephasing effect on spin transport in 2D hexagonal lattice topological insulator
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| dc.contributor.advisor | Alam, Dr. Mahbub | |
| dc.contributor.author | Istiaque Rahaman, Md. | |
| dc.date.accessioned | 2024-04-06T03:18:19Z | |
| dc.date.available | 2024-04-06T03:18:19Z | |
| dc.date.issued | 2021-09-27 | |
| dc.identifier.uri | http://lib.buet.ac.bd:8080/xmlui/handle/123456789/6692 | |
| dc.description.abstract | 2D hexagonal lattice Topological Insulator(TI) shows topologically protectedspin polarized edge transport while the bulk of the material remains insulating.Thesuppressionofbackscatteringofelectronsmakestheedgetransportofelec-trons robust against any perturbation. Elastic phonon dephasing represents ageneralized scattering and dephasing mechanism. In this work, we have illus-trated the effect of elastic phonon dephasing on the transport of electron in 2Dhexagonal lattice TI using Non Equilibrium Green’s Function (NEGF) formal-ism.Thetransmissionwasfoundtobeunity(1)andthephaseoftheelectronre-mained coherent even after strong phonon dephasing. The results of this paperindicate the suitability of TI in future dissipationless coherent nanoelectronicdevices. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering | en_US |
| dc.subject | Electronic circuits | en_US |
| dc.title | Elastic phonon dephasing effect on spin transport in 2D hexagonal lattice topological insulator | en_US |
| dc.type | Thesis-MSc | en_US |
| dc.contributor.id | 0417062310 | en_US |
| dc.identifier.accessionNumber | 119374 | |
| dc.contributor.callno | 623.815/IST/2021 | en_US |
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Dissertations/Theses - Department of Electrical and Electronic Engineering
Post graduate dissertations (Theses) of Electrical and Electronic Engineering (EEE)