Effect of strain on electrostatic and ballistic transport performance limit for high mobility substrate MOSFETS and MOS HEMTS
by Raisul Islam.
Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET Subject(s): MOSFET-Numerical resultsOnline resources: Click here to access online| Item type | Current location | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
| Thesis | Central Library, BUET Reference section | 623.9732 /RAI/2011 (Browse shelf) | Available | 109998 |
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