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Design of cmos-memristor hybrid ternary content addressable memory using memristor as ternary level memory cell

by Masoodur Rahman Khan, Md.

Publisher: Dhaka Department of Electrical and Electronic Engineering, BUET 2023Description: xvii, 115 p.Subject(s): MemristorsOnline resources: Click here to access online

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Item type	Current location	Call number	Copy number	Status	Date due	Barcode
Thesis	Central Library, BUET Reference section	623.815/MAS/2023 (Browse shelf)	1	Available		119581

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Previous	623.815/MAR/1974 Guidebook of electronic circuits	623.815/MAR/1974 Guidebook of electronic circuits	623.815/MAR/1974 Guidebook of electronic circuits	623.815/MAS/2023 Design of cmos-memristor hybrid ternary content addressable memory using memristor as ternary level memory cell	623.815/MEH/2015 Analytical modeling of a vacuum field effect transistor (VFET)	623.815/MOS/1981 Handbook on semiconductors	623.815/MUK/2018 Design of plasmonic nanostructures for single molecule detection based on fluorescence dependent surface Plasmon coupled emission	Next

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